ait semiconductor inc. www.ait - ic.com a m2303 mosfet - 30v p - channel enhancement mode rev1.2 - mar 2011 released , j un 201 2 updated - - 1 - description features the am2303 is the p - channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent r ds(on) low gate charge and operation gate as 2.5v. this device is suitable for use as a load switch or other general applications. the am 3401 is available in sot - 23 package ? - 30v/ - 4.3a, r ds(on) = 50 m(typ.)@v gs = - 10v ? - 30v/ - 3.5a, r ds(on) = 58 m(typ.)@v gs = - 4.5v ? - 30v/ - 2.5a, r ds(on) = 73 m(typ.)@v gs = - 2.5v ? super high density cell design for extremely low r ds(on) ? exceptional on - resistance and maximum dc current capability ? available in sot - 23 package order ing information applications package type part number sot - 23 e3 am 2303 e3r am2303 e3vr note v: halogen free package r: tape & reel ait provides all rohs products suffix v means halogen free package ? high frequency point - of - load synchronous buck converter for mb/nb/umpc/vga ? dc/dc converter ? load switch p c hannel mosfet
ait semiconductor inc. www.ait - ic.com a m2303 mosfet - 30v p - channel enhancement mode rev1.2 - mar 2011 released , j un 201 2 updated - - 2 - pin description top view pin # symbol function 1 g gate 2 s source 3 d drain
ait semiconductor inc. www.ait - ic.com a m2303 mosfet - 30v p - channel enhancement mode rev1.2 - mar 2011 released , j un 201 2 updated - - 3 - absolute maximum ratings t a = 25 , u nless otherwise noted v dss , drain - source voltage - 30v v gss, gate - source voltage 12v i d , continuous drain current , v gs = - 10v note1 t c = 25 - 4.3a t c = 70 - 3.8a i dm , pulsed drain current note2 - 20a p d , power dissipation t a =25 o c 1. 2 5w t a =70 o c 0.8 w t j , operation junction temperature - 55 ~150 t stg , storage temperature range - 55 ~150 stresses above may cause permanent damage to the device. these are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the electrical characteristics are not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. note1: the value of r ja is measured with the device mounted on 1in 2 fr - 4 board with 2oz. copper, in a still air environment with t a =25 c. note2 : the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% thermal information symbol max unit r ja 120 /w r jl 80 /w
ait semiconductor inc. www.ait - ic.com a m2303 mosfet - 30v p - channel enhancement mode rev1.2 - mar 2011 released , j un 201 2 updated - - 4 - electrical characteristics t a = 25 , u nless otherwise noted paramet er symbol conditions min typ . max units static parameters drain - source breakdown voltage v (br)dss v gs =0v,i d = - 250a - 3 0 - - v gate threshold voltage v gs(th) v ds =v gs ,i d = - 250a - 0.6 - - 1.0 v gate leakage current i gss v ds =0v,v gs =12v - - 100 na zero ga te voltage drain - source leakage current i dss v ds = - 24v,v gs =0v t j =25c - - - 1 a v ds = - 24v,v gs =0v t j =55c - - - 5 drain - source on - resistance note2 r ds(on) v gs = - 10v,i d = - 4.3a - 50 58 m v gs = - 4.5v,i d = - 3.5a - 58 65 v gs = - 2.5v,i d = - 2.5a - 73 92 forward transconductance g fs v ds = - 5v,i d = - 4.0a - 10 - s source - drain doide diode forward voltage v sd i s = - 1.0a,v gs =0v - - 0.7 - 1. 0 v continuous source current note1,3 i s - - - 5. 6 a dynamic parameters total gate charge q g ( - 4.5v) v ds = - 20 v , v gs = - 4.5 v i d - 4.0a - 6 . 8 - nc gate - source charge q gs - 3.0 - gate - drain charge q gd - 3. 3 - input capacitance c iss v ds = - 1 2 v , v gs =0v f=1mhz - 6 81 - pf output capacitance c oss - 2 90 - reverse transfer capacitance c rss - 112 - turn - on time t d(on) v dd = - 1 2 v , i d = - 4 a v gen = - 10v , r g = 3.3 - 10 - ns t r - 16 - turn - off time t d(off) - 24 - t f - 22 - note3: the data is theoretically the same as id and i dm , in real applications , should be limited by total power dissipation.
ait semiconductor inc. www.ait - ic.com a m2303 mosfet - 30v p - channel enhancement mode rev1.2 - mar 2011 released , j un 201 2 updated - - 5 - typical characteristics 25 , u nless noted 1. output chara cteristics 2. drain - source on resistance 3. drain source on resistance 4. transfer characteristics 5. gate charge 6. drain source resistance
ait semiconductor inc. www.ait - ic.com a m2303 mosfet - 30v p - channel enhancement mode rev1.2 - mar 2011 released , j un 201 2 updated - - 6 - 7. capa citance 8. source drain diode forward 9. power dissipation 10. drain current 11. thermal transient impedance
ait semiconductor inc. www.ait - ic.com a m2303 mosfet - 30v p - channel enhancement mode rev1.2 - mar 2011 released , j un 201 2 updated - - 7 - package information dimension in sot - 23 package (un it: mm) symbol min max a 0.900 1. 150 a1 0.000 0.100 a2 0.900 1.0 50 b 0.300 0.500 c 0. 080 0.15 0 d 2.80 0 3.00 0 e 1.2 00 1.4 00 e1 2.2 50 2.5 50 e 0.950( typ. ) e1 1.800 2.000 l 0.300 0.5 00 0 8
ait semiconductor inc. www.ait - ic.com a m2303 mosfet - 30v p - channel enhancement mode rev1.2 - mar 2011 released , j un 201 2 updated - - 8 - important notice ait semiconductor inc. (ait) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. ait semiconductor inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applicati ons. use of ait products in such applications is understood to be fully at the risk of the customer. as used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. in order to minimize risks associa ted with the customer's applications, the customer should provide adequate design and operating safeguards. ait semiconductor inc . assumes to no liability to customer product design or application support. ait warrants the performance of its products of the specifications applicable at the time of sale.
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